Showing posts with label delay variation. Show all posts
Showing posts with label delay variation. Show all posts

Can a net have negative propagation delay?


As we discussed in ‘’Is it possible for a logic gate to have negative propagation delay”, a logic cell can have negative propagation delay. However, the only condition we mentioned was that the transition at the output pin should be improved drastically so that 50% level at output is reached before 50% level of input waveform.

In other words, the only condition for negative delay is to have improvement in slew. As we know, a net has only passive parasitic in the form of parasitic resistances and capacitances. Passive elements can only degrade the transition as they cannot provide energy (assuming no crosstalk); rather can only dissipate it. In other words, it is not possible for a net to have negative propagation delay.

However, we can have negative delay for a net, if there is crosstalk, as crosstalk can improve the transition on a net. In other words, in the presence of crosstalk, we can have 50% level at output reached before 50% level at input; hence, negative propagation delay of a net.

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On-chip variations – the STA takeaway

Static timing analysis of a design is performed to estimate its working frequency after the design has been fabricated. Nominal delays of the logic gates as per characterization are calculated and some pessimism is applied above that to see if there will be any setup and/or hold violation at the target frequency. However, all the transistors manufactured are not alike. Also, not all the transistors receive the same voltage and are at same temperature.  The characterized delay is just the delay of which there is maximum probability. The delay variation of a typical sample of transistors on silicon follows the curve as shown in figure 1. As is shown, most of the transistors have nominal characteristics. Typically, timing signoff is carried out with some margin. By doing this, the designer is trying to ensure that more number of transistors are covered. There is direct relationship between the margin and yield. Greater the margin taken, larger is the yield. However, after a certain point, there is not much increase in yield by increasing margins. In that case, it adds more cost to the designer than it saves by increase in yield. Therefore, margins should be applied so as to give maximum profits.

Most of the transisors have close to nominal delay. However, some transistors have delay variations. Theoretically, there is no bound existing for delay variations. However, probabilty of having that delay decreases as delay gets far from nominal.
Number of transistors v/s delay for a typical silicon transistors sample


We have discussed above how variations in characteristics of transistors are taken care of in STA. These variations in transistors’ characteristics as fabricated on silicon are known as OCV (On-Chip Variations). The reason for OCV, as discussed above also, is that all transistors on-chip are not alike in geometry, in their surroundings, and position with respect to power supply. The variations are mainly caused by three factors:
  • Process variations: The process of fabrication includes diffusion, drawing out of metal wires, gate drawing etc. The diffusion density is not uniform throughout wafer. Also, the width of metal wire is not constant. Let us say, the width is 1um +- 20 nm. So, the metal delays are bound to be within a range rather than a single value. Similarly, diffusion regions for all transistors will not have exactly same diffusion concentrations. So, all transistors are expected to have somewhat different characteristics.
  • Voltage variation: Power is distributed to all transistors on the chip with the help of a power grid. The power grid has its own resistance and capacitance. So, there is voltage drop along the power grid. Those transistors situated close to power source (or those having lesser resistive paths from power source) receive larger voltage as compared to other transistors. That is why, there is variation seen across transistors for delay.
  • Temperature variation: Similarly, all the transistors on the same chip cannot have same temperature. So, there are variations in characteristics due to variation in temperatures across the chip.


How to take care of OCV: To tackle OCV, the STA for the design is closed with some margins. There are various margining methodologies available. One of these is applying a flat margin over whole design. However, this is over pessimistic since some cells may be more prone to variations than others. Another approach is applying cell based margins based on silicon data as what cells are more prone to variations. There also exist methodologies based on different theories e.g. location based margins and statistically calculated margins. As advances are happening in STA, more accurate and faster discoveries are coming into existence.